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| STGW20NB60KD N-CHANNEL 20A - 600V TO-247 SHORT CIRCUIT PROOF PowerMESHTM IGBT Table 1: General Features TYPE STGW20NB60KD Figure 1: Package IC @100C 25 A VCES 600 V VCE(sat) (Max) @25C < 2.8 V OFF LOSSES INCLUDE TAIL CURRENT HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW ON-LOSSES LOW GATE CHARGE VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION 3 2 1 TO-247 Weight: 4.41gr 0.01 Max Clip Pressure: 150 N/mm2 Figure 2: Internal Schematic Diagram DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS U.P.S WELDING EQUIPMENTS Table 2: Order Codes SALES TYPE STGW20NB60KD MARKING GW20NB60KD PACKAGE TO-247 PACKAGING TUBE Rev. 3 May 2005 1/11 STGW20NB60KD Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM (1) TSC PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25C (#) Collector Current (continuous) at 100C (#) Collector Current (pulsed) Short Circuit Withstand Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 20 50 25 100 10 170 1.2 - 55 to 150 Unit V V V A A A s W W/C C (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Min. Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient --Typ. --Max. 0.73 50 C/W C/W Electrical Characteristics (Tcase =25C unless otherwise specified) Table 5: Off Symbol VBR(CES) ICES Parameter Collectro-Emitter Breakdown Voltage Collector-Emitter Leakage Current (VCE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VGE = Max Rating Tc=25C Tc=125C VGE = 20 V , VCE = 0 Min. 600 Typ. Max. Unit V 10 100 100 A A nA IGES Table 6: On Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE= VGE, IC= 250 A VGE= 15 V, IC= 20A, Tj= 25C VGE= 15 V, IC= 20A, Tj= 125C Min. 5 2.3 1.9 Typ. Max. 7 2.8 Unit V V V (#) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( M AX ) C C 2/11 STGW20NB60KD ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs Cies Coes Cres Qg Qge Qgc tscw Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Short Circuit Withstand Time Test Conditions VCE = 25 V, IC= 20 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 8 1560 190 38 85 14.4 51 10 115 Max. Unit S pF pF pF nC nC nC s VCE = 480 V, IC = 20 A, VGE = 15V, (see Figure 19) Vce = 0.5 BVces , Tj = 125C RG = 10 , VGE= 15V Table 8: Switching On Symbol td(on) tr (di/dt)on Eon (2) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 20 A RG= 10, VGE= 15V, Tj= 25C (see Figure 17) VCC = 480 V, IC = 20 A RG= 10, VGE= 15V, Tj= 125C (see Figure 17) Min. Typ. 39 35 453 675 Max. Unit ns ns A/s J 2) Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. Table 9: Switching Off Symbol tr(Voff) tc td(off) tf Eoff (3) Ets tr(Voff) tc td(off) tf Eoff (3) Ets Parameter Off Voltage Rise Time Cross-over Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Off Voltage Rise Time Cross-over Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 20 A, RGE = 10 , VGE = 15 V Tj = 125 C (see Figure 17) Test Conditions Vcc = 480 V, IC = 20 A, RGE = 10 , VGE = 15 V TJ = 25 C (see Figure 17) Min. Typ. 25 160 105 95 0.5 0.9 46 175 130 150 0.70 1.35 Max. Unit ns ns ns ns mJ mJ ns ns ns ns mJ mJ (3)Turn-off losses include also the tail of the collector current. 3/11 STGW20NB60KD Table 10: Collector-Emitter Diode Symbol If Ifm Vf trr Qrr Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 10 A If = 10 A, Tj = 125 C If = 10 A ,VR = 27 V, Tj =125C, di/dt = 100 A/s (see Figure 20) 1.27 1 80.5 181 4.5 Test Conditions Min. Typ. Max. 20 80 2.0 Unit A A V V ns nC A 4/11 STGW20NB60KD Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Gate Threshold vs Temperature 5/11 STGW20NB60KD Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage Figure 10: Capacitance Variations Figure 13: Diode Forward Voltage Figure 11: Turn-Off Energy Losses vs Temperature Figure 14: Total Switching Losses vs Collector Current 6/11 STGW20NB60KD Figure 15: Thermal Impedance Figure 16: Turn-Off SOA 7/11 STGW20NB60KD Figure 17: Test Circuit for Inductive Load Switching Figure 19: Gate Charge Test Circuit Figure 18: Switching Waveforms Figure 20: Diode Recovery Times Waveform 8/11 STGW20NB60KD TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 9/11 STGW20NB60KD Table 11: Date 21-Mar-2005 05-Apr-2005 Revision History Revision 2 3 Description of Changes New stylesheet. Some value changed on Table 3 and 4 New updated values in table 3 10/11 STGW20NB60KD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11 |
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